IRPS Symposium Reveals Latest Findings in Microelectronics Reliability


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Phoenix — The 2004 International Reliability Physics Symposium (IRPS) reports the largest submission and acceptance of technical papers in its 42-year history of providing the latest developments in the reliability and performance of circuits and devices to the microelectronics industry.

The latest research on Cu/low k interconnects and novel transistor reliability findings will be featured at the 2004 IRPS, continuing its tradition of providing a forum for cutting-edge technology and research.

At this premier symposium for electronics reliability, researchers will be able to hear the authors discuss their findings in technical sessions, tutorials, workshops, hands-on equipment demonstrations and a poster session. Also continuing in its second year at IRPS is the Reliability Year in Review, which will bring attendees up to speed on the latest developments in this growing field. IRPS 2004 will be held from April 25 through April 29, 2004, at the Hyatt Regency Phoenix at Civic Plaza, Phoenix, Ariz. Technical program highlights include:

  • Solving Negative-Bias Temperature Instability (NBTI) on surface channel PMOS Transistors
  • Interconnects
  • SER Performance
  • Back-end Integration
  • Failure Analysis

In addition to these highlighted areas, IRPS 2004 will also include sessions on design practices, ESD, future CMOS, latch up, memory, MEMS, products and circuits, general reliability, RF/MMIC reliability, and high K and SIO dielectrics.For more than 40 years, IRPS has been one of the leading meetings for engineers in the area of electronic component reliability. For more information, visit www.irps.org.

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