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Designated the IRF7807D1 and IRF7807D2, these low-voltage 30 V FETKYs are said to enable circuit designers to reduce the required footprint of the synchronous MOSFET solution, thereby increasing power density while providing the same efficiency and performance of an equivalent discrete solution. The D1 is in an SO-8 package and reportedly provides RDS(on) of 17 mΩ typical at Vgs = 4.5 V for on-state conditions. The D2 offers the same on-state performance, but integrates a 3 A-rated Schottky with Vf = 0.57 V at 3 A.
El Segundo, Calif.