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This family of MOSFETs reportedly offers a combination of low on-resistance and low gate charge, and is said to provide optimum performance and high efficiency for switching applications such as DC/DC conversion. The HDMOS range includes eight N-channel devices. With drain source voltages up to 30 V, they are suited for low-voltage switching applications. On-resistance ranges from 40 up to 180 mΩ maximum. On-state losses are minimized, and they are said to improve efficiency in low-frequency drive applications.